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Measurement of Fresnel drag produced by electron motion in semiconductors

T. S. Moss, G. J. Burrell, A. Hetherington
Published 17 December 1968.DOI: 10.1098/rspa.1968.0212
T. S. Moss
Royal Aircraft Establishment, Farnborough, England
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G. J. Burrell
Royal Aircraft Establishment, Farnborough, England
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A Hetherington
Royal Aircraft Establishment, Farnborough, England
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Abstract

It is shown that free carriers in a solid may be treated as a moving dispersive medium which causes a Fresnel drag effect. We have succeeded in detecting the resulting small change in refractive index, using an InAs specimen placed inside a ring laser operating at 3⋅39 μm. Excellent agreement is obtained between experiment and theory. This is believed to be the first observation of a relativistic effect produced by carriers moving in a solid.

Footnotes

  • This text was harvested from a scanned image of the original document using optical character recognition (OCR) software. As such, it may contain errors. Please contact the Royal Society if you find an error you would like to see corrected. Mathematical notations produced through Infty OCR.

  • Received May 16, 1968.
  • Scanned images copyright © 2017, Royal Society

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17 December 1968
Volume 308, issue 1492
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Measurement of Fresnel drag produced by electron motion in semiconductors
T. S. Moss, G. J. Burrell, A. Hetherington
Proc. R. Soc. Lond. A 1968 308 125-132; DOI: 10.1098/rspa.1968.0212. Published 17 December 1968
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Measurement of Fresnel drag produced by electron motion in semiconductors

T. S. Moss, G. J. Burrell, A. Hetherington
Proc. R. Soc. Lond. A 1968 308 125-132; DOI: 10.1098/rspa.1968.0212. Published 17 December 1968

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