PT - JOURNAL ARTICLE
AU -
TI - A formalism for the indirect Auger effect. II
DP - 1976 Jan 27
TA - Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences
PG - 565--573
VI - 347
IP - 1651
4099 - http://rspa.royalsocietypublishing.org/content/347/1651/565.short
4100 - http://rspa.royalsocietypublishing.org/content/347/1651/565.full
SO - Proc R Soc Lond A Math Phys Sci1976 Jan 27; 347
AB - The Auger recombination rate in indirect semiconductors with zincblende and diamond lattices is investigated, account being taken, for the first time, the properties of overlap integrals near symmetry points and axes. The effect of using theoretically estimated parameters is a reduction of the recombination coefficient by a factor 10. It is explained that the results, and those of the preceding paper, are still subject to uncertainties arising from the band structure so that only the order of magnitude of these coefficients can so far be regarded as known theoretically.